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NTMFS4927N,
NTMFS4927NC
Power MOSFET
30 V, 38 A, Single N ? Channel, SO ? 8 FL
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Optimized for 5 V, 12 V Gate Drives
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
7.3 m W @ 10 V
12.0 m W @ 4.5 V
D (5,6)
I D MAX
38 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
30
Unit
V
Gate ? to ? Source Voltage
V GS
± 20
V
G (4)
Continuous Drain
Current R q JA
(Note 1)
T A = 25 ° C
T A = 100 ° C
I D
13.6
8.6
A
S (1,2,3)
AYWZZ
S
G
D
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JA ≤ 10 s
(Note 1)
Power Dissipation
R q JA ≤ 10 s (Note 1)
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T C = 25 ° C
T C =100 ° C
T C = 25 ° C
P D
I D
P D
I D
P D
I D
P D
2.70
20.4
12.9
6.04
7.9
5.0
0.92
38
24
20.8
W
A
W
A
W
A
W
N ? CHANNEL MOSFET
MARKING
DIAGRAM
D
1 S
S 4927N
SO ? 8 FLAT LEAD
CASE 488AA
STYLE 1
4927N = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ
= Lot Traceability
D
D
Pulsed Drain
Current
T A = 25 ° C, t p = 10 m s
I DM
160
A
ORDERING INFORMATION
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
T A = 25 ° C
I Dmax
T J ,
T STG
I S
100
? 55 to
+150
21
A
° C
A
Device
NTMFS4927NT1G
NTMFS4927NCT1G
Package
SO ? 8 FL
(Pb ? Free)
Shipping ?
1500 /
Tape & Reel
NTMFS4927NCT3G
Drain to Source DV/DT
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 24 V, V GS = 20 V,
I L = 20 A pk , L = 0.1 mH, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
dV/d t
E AS
T L
6.0
20
260
V/ns
mJ
° C
NTMFS4927NT3G SO ? 8 FL 5000 /
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
? Semiconductor Components Industries, LLC, 2012
June, 2012 ? Rev. 8
1
Publication Order Number:
NTMFS4927N/D
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